Hole spin qubits in undoped Ge/SiGe quantum well structures have advanced rapidly in performance and scalability. However, stringent multi-layer patterning and overlay requirements of conventional overlapping-gate devices create a bottleneck for academic proof-of-concept experiments involving few-qubit devices. Here we present fabrication and measurements of Ge/SiGe spin qubit devices with a global accumulation gate and single-layer depletion fine gates, which substantially reduce fabrication complexity. With careful design of the gate-2DHG capacitance, we demonstrate RF-based single-shot spin readout and coherent control of two single-spin qubits. We also characterize the spin coherence times and exchange tunability, which are similar to those reported in recent overlapping-gate Ge/SiGe spin qubit devices. By simplifying fabrication without sacrificing performance, our approach offers a more accessible device design for spin-based quantum technology research.